The group's latest publication has garnered attention from several news sources.

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

Y. W. Yin, J. D. Burton, Y-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, A. Gruverman, X. G. Li, E. Y. Tsymbal & Qi Li

Published online: 17 February 2013 | doi:10.1038/nmat3564

The tunnelling electroresistance effect that occurs at ferroelectric tunnel junctions could form the basis for a class of potential memory applications. Now, an enhanced effect is observed in a complex oxide interface as a result of a ferroelectrically induced phase transition.

"For the first time, researchers have designed a special material interface that has been shown to add to and to improve the functioning of non-silicon-based electronic devices, such as those used in certain kinds of random access memory (RAM)..."

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