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Group III-Nitrides

 

1. S. Raghavan, X. Weng, E.C. Dickey and J.M. Redwing, "Effect of AlN interlayers on growth stress in GaN layers deposited on (111)Si," Appl. Phys. Lett. 87 (2005) p. 142101-1-3.

2.  S. Raghavan, J. Acord and J.M. Redwing, "In-situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire," Appl. Phys. Lett. 86 (2005) p. 261907-1-3.

3. S. Raghavan and J.M. Redwing, "Growth stresses and cracking in GaN films on (111)Si grown by metalorganic chemical vapor deposition I:  AlN buffer layers," J. Appl. Phys. 98 (2005) p. 023514 -1-9.

4.  S. Raghavan and J.M. Redwing, "Growth stresses and cracking in GaN films on (111)Si grown by metalorganic chemical vapor deposition II:  Graded AlGaN buffer layers, J. Appl. Phys. 98 (2005) p. 0235151-1-8.

5. S. Raghavan and J.M. Redwing, "Intrinsic stresses in AlN growth by metalorganic chemical vapor deposition on (0001) sapphire and (111)silicon substrates," J. Appl. Phys. 96 (2004) p. 2995-3003.

6. J.D. Acord, S. Raghavan, D.W. Snyder and J.M. Redwing, "In-situ stress measurements during MOCVD growth of AlGaN on SiC," J. Crystal Growth 272 (2004) p. 65-71.

7. S. Raghavan and J.M. Redwing, "In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111)Si substrates," J. Crystal Growth 261 (2004) p. 294-300.

8. A. Jain, S. Raghavan and J.M. Redwing, "Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates," J. Crystal Growth 269 (2004) p. 128-133.

9. A. Jain and J.M. Redwing, "Study of the growth mechanism and properties of InN films grown by MOCVD," Mater. Res. Soc. Symposium Proceedings Vol. 798 (2004) p. 225-30.

Nanowires

 

1. Y.F. Wang, K.K. Lew, T.T. Ho, L. Pan, S.W. Novak, E.C. Dickey, J.M. Redwing and T.S. Mayer, "Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires," Nano Lett. 5 (2005) p. 2137-2143

2. S.Y. Xu, M.L. Tian, J.G. Wang, H. Xu, J.M. Redwing and M.H. W. Chan, "Nanometer scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam," Small 1 (2005) p. 1221-1229.

3. S. M. Dilts, A. Mohmmad, K.-K. Lew, J. M. Redwing, and S. E. Mohney, “Fabrication and electrical characterization of silicon nanowire arrays,” Mater. Res. Soc. Symposium Proceeding Vol. 832 (2005) p. 287-292.

4. L. Pan, K.K. Lew, J.M. Redwing and E.C. Dickey, "Stranski-Krastanov growth of germanium on silicon nanowires," Nano Lett. 5 (2005) p. 1081-1085.

5. S.E. Mohney, Y. Wang, M.A. Cabassi, K.K. Lew, S. Dey, J.M. Redwing and T.S. Mayer, "Measuring the specific contact resistance of contacts to semiconductor nanowires," Sol. State Electron. 49 (2005) p. 227-232.

6. T.E. Bogart, S. Dey, K.K. Lew, S.E. Mohney and J.M. Redwing, "Diameter controlled synthesis of silicon nanowires using nanoporous alumina membranes," Adv. Mater. 17 (2005) p. 114-116.

7. K.K. Lew, L. Pan, T.E. Bogart, S.M. Dilts, E.C. Dickey, J.M. Redwing, Y. Wang, M.Cabassi, T.S. Mayer and S.W. Novak, "Structural and electrical properties of trimethylboron-doped silicon nanowires," App. Phys. Lett. 85 (2004) p. 3101-3.

8. K.K. Lew, J.M. Redwing, L. Pan and E.C. Dickey “Vapor-liquid-solid growth of silicon germanium nanowires,”, Adv. Mater. 15 (2003) p. 2073-2075.

9. K.K. Lew, L. Pan, E.C. Dickey and J.M. Redwing, “Vapor-liquid-solid growth of silicon-germanium nanowires,” Adv. Mater. 15 (2003) pp. 2073-2076.

10. A.M. Mohammad, S. Dey, K.-K. Lew, J.M. Redwing and S.E. Mohney, “Fabrication of cobalt silicide nanowire contacts to silicon nanowires,” J. Electrochem. Soc. 150 (2003) pp. G577-G580.

11. K.K. Lew and J.M. Redwing, “Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates,” J. Crystal Growth 254 (2003) pp. 14-22.

12. K.K. Lew, C. Reuther, A.H. Carim, J.M. Redwing and B.R. Martin, “Template directed vapor-liquid-solid growth of silicon nanowires,”  J. Vac. Sci. Technol. B 20 (2002) pp. 389-392.

13. A.H. Carim, K.K. Lew and J.M. Redwing, “Bicrystalline Silicon Nanowires”, Advanced Materials, 13 (2001) pp. 1489-1491.

MgB2

 

1. A.V. Pogrebnyakov, J.M. Redwing, J.E. Giencke, C.B. Eom, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J. Chen, Y.F. Hu, Y. Cui, Qi Li and X.X. Xi, "Carbon-doped MgB2 thin films grown by hydrid physical-chemical vapor deposition," IEEE Trans. Appl. Supercond. 15 (2005) p. 3321-3324.

2. V. Braccini, A. Gurevich, J.E. Giencke, M.C. Jewell, C.B. Eom, D.C. Larbalestier, A. Pogrebnyakov, J.M. Redwing, X.X. Xi, R.K. Singh, R. Gandikota, J. Kim, B. Wilkens, N. Newman, J. Rowell, B. Moeckly, V. Ferrando, C. Tarantini, D. Marre, M. Putti, C. Ferdeghini, R. Vaglio and E. Haanappel, "High-field superconductivity in alloyed MgB2 thin films," Phys. Rev. B 71 (2005) p. 12504-1-4.

3. A.V. Pogrebnyakov, J.M. Redwing, S. Raghavan, V. Vaithyanathan, D.G. Schlom, S.Y. Xu, Qi Li, D.A. Tenne, A. Soukiassian, X.X. Xi, M.D. Johannes, D. Kasinathan, W.E. Pickett, J.S. Wu and J.C. H. Spence, "Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening," Phys. Rev. Lett. 93 (2004) p. 147006-1-147006-4.

4. A. V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui and Qi Li, "Properties of MgB2 thin films with carbon doping," Appl. Phys. Lett. 85 (2004) p. 2017-2019.

5. J.S. Wu, N. Jiang, B. Jiang, J.C. H. Spence, A.V. Pogrebnyakov, J.M. Redwing and X.X. Xi, "Interface structures in MgB2 thin films on (0001) SiC," Appl. Phys. Lett. 85 (2004) p. 1155-1157.

6. X.X. Xi, Z.H. Zeng, A.V. Pogrebnyakov, A. Soukiassian, S.Y. Xu, Y.F. Hu, E. Wertz, Qi Li, C.O. Brubaker, Z.K. Liu, E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian, H.P. Sun and X.Q. Pan, “Deposition and properties of superconducting MgB2 thin films,” J. Supercond. 16 (2003) pp. 801-806.

7. A.V. Pogrebnyakov, J.M. Redwing, J.E. Jones, X.X. Xi, S.Y. Xu, Q. Li, V. Vaithyanathan and D.G. Schlom, “Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition,” Appl. Phys. Lett. 82 (2003) pp. 4319-4321.

8. J.M. Rowell, S.Y. Xu, Q. Li, X.H. Zeng, A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, W. Tian and X. Pan, “Critical current density and resistivity of MgB2 films,” Appl. Phys. Lett. 83 (2003) pp. 102-104.

9. X.H. Zeng, A.V. Pogrebnyakov, M.H. Zhu, X.X. Xi, S.Y. Xu, Q. Li, J.M. Redwing, J. Lettieri, V. Vaithyanathan, D.G. Schlom, Z.K. Liu, O. Trithaveesak and J. Schubert, “Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition,” Appl. Phys. Lett. 82 (2003) pp. 2097-2099.

10. X.X. Xi, X.H. Zeng, A.V. Pogrebnyakov, S.Y. Xu, E. Wertz, Qi Li, Y. Zhong, C.O. Brubaker, Z.K. Liu, E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian and X.Q. Pan, “In situ growth of MgB2 thin films by hydrid physical-chemical vapor deposition,” IEEE Trans. Appl. Supercond. 13 (2003) p. 3233-3237.

11. X.X. Xi, X.H. Zeng, A.V. Pogrebnyakov, S.Y. Xu, Q. Li, Y. Zhong, C.O. Brubaker, Z.K. Liu, E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian and X.Q. Pan, “Thermodynamics and thin film deposition of MgB2 superconductors,” Supercond. Sci. and Techn. 15 (2002) pp. 451-456.

12. X. Zeng, A.V. Pogrebnyakov, A. Kotcharov, J.E. Jones, X.X. Xi, E.M. Lysczek, J.M. Redwing, S. Xu, Q. Li, J. Lettieri, D.G. Schlom, W. Tian, X. Pan and Z.K. Liu, “In-situ epitaxial MgB2 thin films for superconducting electronics,”  Nature Materials 1 (2002) pp. 35-38.